Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – On insulating substrate or layer
Reexamination Certificate
2006-08-22
2006-08-22
Cao, Phat X. (Department: 2814)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
On insulating substrate or layer
C438S155000
Reexamination Certificate
active
07094635
ABSTRACT:
There is provided an inexpensive light emitting device and an electronic instrument using the same. In this invention, photolithography steps relating to manufacture of a transistor are reduced, so that the yield of the light emitting device is improved and the manufacturing period thereof is shortened. A feature is that a gate electrode is formed of conductive films of plural layers, and by using the selection ratio of those at the time of etching, the concentration of an impurity region formed in an active layer is adjusted.
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Ono Koji
Suzawa Hideomi
Takayama Toru
Yamazaki Shunpei
Cao Phat X.
Doan Theresa T.
Semiconductor Energy Laboratory Co,. Ltd.
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