Semiconductor gate structure and method for fabricating a...

Details Semiconductor gate structure and method for fabricating a... Semiconductor gate structure and method for fabricating a...

2006-05-16

2006-05-16

Wojciechowicz, Edward (Department: 2815)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S259000, C257S388000

Reexamination Certificate

active

07045422

ABSTRACT:
A method for fabricating a semiconductor gate structure including depositing at least one sacrificial layer on a semiconductor substrate; patterning the at least one sacrificial layer to form at least one cutout in the at least one sacrificial layer for uncovering the semiconductor substrate; forming a sidewall spacer over the sidewalls of the at least one sacrificial layer in the at least one cutout; forming a gate dielectric on the semiconductor substrate in the cutout; providing a gate electrode in the at least one cutout in the at lest one sacrificial layer; and removing the at least one sacrificial layer for the uncovering the gate electrode surrounded by the sidewall spacer. A semiconductor device is also provided.

REFERENCES:
patent: 5434093 (1995-07-01), Chau et al.
patent: 6107140 (2000-08-01), Lee et al.
patent: 2002/0028555 (2002-03-01), Boyd et al.
patent: 2003/0162358 (2003-08-01), Hanafi et al.
patent: 2004/0104433 (2004-06-01), Ieong et al.

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