Methods of forming memory circuitry

Details Methods of forming memory circuitry Methods of forming memory circuitry

2006-03-07

2006-03-07

Tsai, H. Jey (Department: 2812)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S296000

Reexamination Certificate

active

07008843

ABSTRACT:
The invention includes methods of forming memory circuitry. In one implementation, a semiconductor substrate includes a pair of word lines having a bit node received therebetween. A bit node contact opening is formed within insulative material over the bit node. Sacrificial plugging material is formed within the bit node contact opening between the pair of word lines. Sacrificial plugging material is removed from the bit node contact opening between the pair of word lines, and it is replaced with conductive material that is in electrical connection with the bit node. Thereafter, the conductive material is formed into a bit line.

REFERENCES:
patent: 5250457 (1993-10-01), Dennison
patent: 5387533 (1995-02-01), Kim
patent: 5563089 (1996-10-01), Jost et al.
patent: 5686747 (1997-11-01), Jost et al.
patent: 5728617 (1998-03-01), Tseng
patent: 5821140 (1998-10-01), Jost et al.
patent: 5834349 (1998-11-01), Tseng
patent: 5918122 (1999-06-01), Parekh et al.
patent: 5981333 (1999-11-01), Parekh et al.
patent: 6015983 (2000-01-01), Parekh
patent: 6037218 (2000-03-01), Dennison
patent: 6060351 (2000-05-01), Parekh et al.
patent: 6107189 (2000-08-01), Wald et al.
patent: 6140172 (2000-10-01), Parekh
patent: 6177695 (2001-01-01), Jeng
patent: 6180450 (2001-01-01), Dennison et al.
patent: 6214727 (2001-04-01), Parekh
patent: 6228710 (2001-05-01), Parekh et al.
patent: 6228738 (2001-05-01), Parekh et al.
patent: 6232176 (2001-05-01), Parekh et al.
patent: 6238971 (2001-05-01), Parekh et al.
patent: 6245631 (2001-06-01), Agarwal et al.
patent: 6284641 (2001-09-01), Parekh
patent: 6297525 (2001-10-01), Parekh et al.
patent: 6312988 (2001-11-01), Lowrey et al.
patent: 6323080 (2001-11-01), Parekh
patent: 6329682 (2001-12-01), Parekh et al.
patent: 6329684 (2001-12-01), Parekh et al.
patent: 6337274 (2002-01-01), Hu et al.
patent: 6359302 (2002-03-01), Parekh et al.
patent: 6368962 (2002-04-01), Hu et al.
patent: 6376301 (2002-04-01), Parekh et al.
patent: 6376380 (2002-04-01), Tang et al.
patent: 6383868 (2002-05-01), Parekh et al.
patent: 6407455 (2002-06-01), Wald et al.
patent: 6458649 (2002-10-01), Zahurak et al.
patent: 6468859 (2002-10-01), Parekh et al.
patent: 6486060 (2002-11-01), Hermes et al.
patent: 6500709 (2002-12-01), Parekh et al.
patent: 6524907 (2003-02-01), Parekh et al.
patent: 6589876 (2003-07-01), Tran
patent: 6617635 (2003-09-01), Parekh et al.
patent: 2004/0110341 (2004-06-01), Park et al.

Affiliated with

Also associated with

Rating

Methods of forming memory circuitry does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Methods of forming memory circuitry, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Methods of forming memory circuitry will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3614276