Semiconductor device and method of fabricating the same

Details Semiconductor device and method of fabricating the same Semiconductor device and method of fabricating the same

2006-04-04

2006-04-04

Ghyka, Alexander (Department: 2812)

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

Insulative material deposited upon semiconductive substrate

C438S637000, C438S788000

Reexamination Certificate

active

07022624

ABSTRACT:
The present invention is provided to a semiconductor device and a method of fabricating the same. A spacer consisting of SiCxHy or SiOCxHy having a low dielectric constant is formed at the sidewall of a trench or a hole that is formed in an interlayer insulating film. It is therefore possible to reduce the dielectric constant while reducing critical dimension loss of the trench or the hole. Therefore, the present invention has advantages that it can enhance the operating speed of the device by minimizing parasitic capacitance and prohibiting RC delay and crosstalk.

REFERENCES:
patent: 6262445 (2001-07-01), Swanson et al.
patent: 6723635 (2004-04-01), Ngo et al.
patent: 2002-10073 (2002-02-01), None
patent: 2002-48720 (2002-06-01), None

Affiliated with

Also associated with

Rating

Semiconductor device and method of fabricating the same does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor device and method of fabricating the same, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device and method of fabricating the same will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3612926