Cleaning and liquid contact with solids – Processes – Using sequentially applied treating agents
Reexamination Certificate
2006-08-29
2006-08-29
Boyer, Charles (Department: 1751)
Cleaning and liquid contact with solids
Processes
Using sequentially applied treating agents
C134S001100, C134S022100, C134S030000, C438S905000
Reexamination Certificate
active
07097716
ABSTRACT:
A method of cleaning a plasma etching reactor is provided. The method of cleaning a plasma etching reactor includes generating one or more plasmas from oxygen gas and a hydrogen-containing gas, and exposing interior surfaces of the reactor to the plasma(s) from the oxygen-gas and the hydrogen-containing gas. The cleaning method is used to remove deposited material, such as deposits containing fluorine, carbon, oxygen, and hydrogen from interior surfaces of the reactor. The hydrogen-containing gas may contribute to the cleaning method by providing a source of hydrogen that removes fluorine from the surfaces of the reactor.
REFERENCES:
patent: 4820377 (1989-04-01), Davis et al.
patent: 4842683 (1989-06-01), Cheng et al.
patent: 4916091 (1990-04-01), Freeman et al.
patent: 5158644 (1992-10-01), Cheung et al.
patent: 5164017 (1992-11-01), Moller et al.
patent: 5207836 (1993-05-01), Chang
patent: 5326723 (1994-07-01), Petro et al.
patent: 5417826 (1995-05-01), Blalock
patent: 5534108 (1996-07-01), Qian et al.
patent: 5585012 (1996-12-01), Wu et al.
patent: 5647953 (1997-07-01), Williams et al.
patent: 5679215 (1997-10-01), Barnes et al.
patent: 5792272 (1998-08-01), van Os et al.
patent: 5865896 (1999-02-01), Nowak et al.
patent: 5879575 (1999-03-01), Tepman et al.
patent: 5980688 (1999-11-01), Blalock
patent: 6113731 (2000-09-01), Shan et al.
patent: 6164295 (2000-12-01), Ui et al.
patent: 6274058 (2001-08-01), Rajagopalan et al.
patent: 6313042 (2001-11-01), Cohen et al.
patent: 6569257 (2003-05-01), Nguyen et al.
patent: 2001/0008138 (2001-07-01), Demos et al.
patent: 2002/0052114 (2002-05-01), Marks
patent: 0 418 592 (1991-03-01), None
patent: 418592 (1991-03-01), None
“The Chamber Memory Effect Induces P+ Junction Leakage and EEPROM Tunneling Oxide Degradation”, C.D. Chang, et al., IEEE/CPMT International Electronics Manufacturing technology Symposium, 1999, pp. 348-352.
“Study of Chamber History Effect in Oxide Etcher”, C.H. Liao, et al., Taiwan Semiconductor manufacturing Company Ltd., 5thInternational Symposium on Plasma Process-Induced Damage, May 23-24, 2000 Santa Clara, CA., pp. 85-88.
U.S. Appl. No. 09/710,357, filed Nov. 9, 2000, US 6569257.
Barnes Michael
Nguyen Huong Thanh
Applied Materials Inc.
Boyer Charles
Patterson & Sheridan LLP
LandOfFree
Method for performing fluorocarbon chamber cleaning to... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method for performing fluorocarbon chamber cleaning to..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for performing fluorocarbon chamber cleaning to... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3612399