Nonvolatile memory fabrication methods in which a dielectric...

Details Nonvolatile memory fabrication methods in which a dielectric... Nonvolatile memory fabrication methods in which a dielectric...

2006-08-15

2006-08-15

Chaudhari, Chandra (Department: 2891)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S657000, C257SE21684

Reexamination Certificate

active

07091091

ABSTRACT:
A first dielectric (120) and a first floating gate layer (130.1) are formed on a semiconductor substrate (110). The first dielectric, the first floating gate layer, and the substrate are etched to form isolation trenches (150). The first dielectric (120) is etched to pull the first dielectric away from the trench edges (150E) and/or the edges of the first floating gate layer (130E). The trench edges and/or the edges of the first floating gate layer are then oxidized. The trenches are filled with a second dielectric (210.2), which is then etched laterally adjacent to the edges of the trench and the first floating gate layer. A second floating gate layer (130.2) is formed to extend into the regions which were occupied by the second dielectric before it was etched.

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