Process for treating solid surface and substrate surface

Etching a substrate: processes – Gas phase etching of substrate – Etching inorganic substrate

Reexamination Certificate

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C216S075000, C216S076000, C134S002000, C134S003000, C134S009000, C134S021000, C134S022100, C438S706000

Reexamination Certificate

active

07025896

ABSTRACT:
Ruthenium, osmium and their oxides can be etched simply and rapidly by supplying an atomic oxygen-donating gas, typically ozone, to the aforementioned metals and their oxides through catalysis between the metals and their oxides, and the ozone without any damages to wafers and reactors and application of the catalysis not only to the etching but also to chamber cleaning ensures stable operation of reactors and production of high quality devices.

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