Dipole illumination

Radiation imagery chemistry: process – composition – or product th – Imaging affecting physical property of radiation sensitive... – Making electrical device

Reexamination Certificate

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Details

C430S394000, C430S396000, C250S492220, C250S492200, C355S067000

Reexamination Certificate

active

07033734

ABSTRACT:
A system for fabricating patterns on a semiconductor, the system includes a first aperture having two openings aligned in a first axis, a first mask, a second aperture having two openings aligned in a second axis, and a second mask. The system may be implemented with the second axis substantially perpendicular to the first axis.

REFERENCES:
patent: 5821034 (1998-10-01), Kim et al.
patent: 6096458 (2000-08-01), Hibbs
patent: 6388736 (2002-05-01), Smith et al.
patent: 6855486 (2005-02-01), Finders et al.

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