Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2006-09-26
2006-09-26
Tsai, H. Jey (Department: 2812)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S304000, C438S649000
Reexamination Certificate
active
07112498
ABSTRACT:
Methods of forming silicide layers of a semiconductor device are disclosed. A disclosed method comprises depositing a polysilicon layer, a buffer oxide layer, and a buffer nitride layer on a semiconductor substrate; forming a gate on the semiconductor substrate by removing some portion of the polysilicon layer, the buffer oxide layer, and the buffer nitride layer; forming sidewall spacers on the sidewalls of the gate; forming source and drain regions in the semiconductor substrate by performing an ion implantation process; forming a first silicide layer on the source and drain regions; depositing a first ILD layer over the semiconductor substrate including the gate and the first silicide layer; removing some portion of the first ILD layer to expose the top surface of the gate; and forming a second silicide layer on the gate.
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patent: 6630721 (2003-10-01), Ligon
patent: 2002/0158280 (2002-10-01), Shinkawata
patent: 2003/0124844 (2003-07-01), Li et al.
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Dongbu Electronics Co., Ltd
Fortney Andrew D.
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