Method of oxidizing a semiconductor wafer

Details Method of oxidizing a semiconductor wafer Method of oxidizing a semiconductor wafer

1994-07-05

1997-04-15

Breneman, R. Bruce

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

By reaction with substrate

H01L 2102

Patent

active

056209320

ABSTRACT:
A semiconductor wafer, to form an oxide film, is oxidized in a heat treatment furnace and is annealed if necessary. When said wafer is taken out of said heat treatment furnace, an ambient gas containing water vapor is fed into said heat treatment furnace. The gap linear velocity of the ambient gas is set to 200 cm/min or more. If the ambient gas used at the time when the wafer is taken out of the furnace is a dry gas without water vapor, then an additional heat treatment is carried out using a hydrogen containing atmosphere at low temperature.

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F. Montillo High Temperature Annealing of Oxidized Silicon Surfaces Sep. 1971.

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