Method for manufacturing semiconductor device and...

Details Method for manufacturing semiconductor device and... Method for manufacturing semiconductor device and...

2006-08-08

2006-08-08

Lindsay, Jr., Walter L. (Department: 2812)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S275000, C438S745000

Reexamination Certificate

active

07087494

ABSTRACT:
A first oxide film and a second oxide film16are formed in a first region13aand a second region13b,respectively, on the surface of the semiconductor substrate10,via thermal oxidization method, and the first oxide film is removed while the second oxide film16is covered with the resist layer18formed thereon, and then the resist layer18is removed with a chemical solution containing an organic solvent such as isopropyl alcohol as a main component. Subsequently, a third oxide film22having different thickness than the second oxide film16is formed in the first region13a.

REFERENCES:
patent: 6300202 (2001-10-01), Hobbs et al.
patent: 6835667 (2004-12-01), Christenson et al.
patent: 6855639 (2005-02-01), Brask et al.
patent: 2000-003965 (2000-01-01), None
patent: 2001-274378 (2001-10-01), None
Ohmi, Tadahiro. “Ultra Clean ULSI Technology,” 1995, BAIFUKAN, Tokyo, Japan.

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