Method for manufacturing Group-III nitride compound...

Details Method for manufacturing Group-III nitride compound... Method for manufacturing Group-III nitride compound...

2006-09-05

2006-09-05

Whitehead, Jr., Carl (Department: 2813)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C257SE21158, C438S660000

Reexamination Certificate

active

07101780

ABSTRACT:
After a p-seat electrode-forming layer is laminated onto a light-transmissive electrode-forming layer, a first heating step and a second heating step are carried out for alloying the two layers. In the first heating step, heat treatment is performed at a relatively low temperature in an atmosphere containing oxygen. In the second heating step, heat treatment is performed at a relatively high temperature in an atmosphere not containing oxygen.

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Tomoyuki Maeda, et al., “Effects of annealing in an oxygen ambient on electrical properties of Ohmic contacts to p-GaN”,The Institute of Electronics, Information and Communication Engineers, Jul. 22, 1998, vol. 98, No. 185, pp. 89-94.

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