Method of fabricating a semiconductor device having a...

Details Method of fabricating a semiconductor device having a... Method of fabricating a semiconductor device having a...

2006-04-11

2006-04-11

Flynn, Nathan J. (Department: 2826)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S584000, C438S597000, C438S618000, C438S622000

Reexamination Certificate

active

07026240

ABSTRACT:
In a semiconductor device fabrication method and in a product formed according to the method, a photosensitive polyimide layer (PSPL) layer is applied to a semiconductor device in a manner which overcomes the limitations of the conventional approaches. The beneficial qualities of an added photoresist layer are utilized to avoid unwanted development of the underlying PSPL layer. In this manner, cracking of the PSPL layer is mitigated or eliminated, reducing the device soft error rate (SER) and increasing device yield. This is accomplished in a reliable and low-cost approach that employs standard device fabrication techniques.

REFERENCES:
patent: 5717251 (1998-02-01), Hayashi et al.
patent: 2001-094056 (2001-04-01), None
Wolf and Tauber, “Silicon Processing for the VLSI Era, vol. 1—Process Technology,”2000, Lattice Press, vol. 1, p. 527-531.
Wolf, “Silicon Processing for the VLSI Era, vol. 2— Process Integration,” 1990, Lattice Press, vol. 2, p. 273-276.

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