Silicon rich barrier layers for integrated circuit devices

Details Silicon rich barrier layers for integrated circuit devices Silicon rich barrier layers for integrated circuit devices

2006-07-04

2006-07-04

Zarneke, David A. (Department: 2891)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

Reexamination Certificate

active

07071049

ABSTRACT:
Semiconductor devices and memory cells are formed using silicon rich barrier layers to prevent diffusion of dopants from differently doped polysilicon films to overlying conductive layers or to substrates. A polycilicide gate electrode structure may be formed using the silicon rich barrier layers. Methods of forming the semiconductor devices and memory cells are also provided.

REFERENCES:
patent: 5639687 (1997-06-01), Roman et al.
patent: 6045954 (2000-04-01), Dai et al.
patent: 6096640 (2000-08-01), Hu
patent: 6245669 (2001-06-01), Fu et al.

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