Method of manufacturing a semiconductor device having a capacito

Details Method of manufacturing a semiconductor device having a capacito Method of manufacturing a semiconductor device having a capacito

1996-05-15

1998-08-25

Niebling, John

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438398, 148DIG138, H01L 218242

Patent

active

057982902

ABSTRACT:
A polysilicon film having a rough surface is formed by a reduced pressure CVD method at a temperature of 575.degree. C. and a deposition pressure of 0.2 Torr. Silicon ions are implanted into the polysilicon film having a rough surface. Thus, the tips of concaves and convexes at the rough surface of the polysilicon film are rounded. Then, this polysilicon film having a rough surface is patterned to form a storage node. A cell plate is formed to cover the storage node with a capacitor insulating layer therebetween. Consequently, a semiconductor device capable of suppressing leak current between capacitor electrodes can be manufactured.

REFERENCES:
patent: 5209729 (1993-05-01), Hayashide
patent: 5405801 (1995-04-01), Han et al.
patent: 5597754 (1997-01-01), Lou et al.
patent: 5661340 (1997-08-01), Ema et al.
H. Watanabe et al, An Advanced Fabrication Technology of Hemispherical Grained (HSG) Poly-Si for High Capacitance Storage Electrodes, Extended Abstracts of the 1991 International Conference on Solid State devices and Materials, Yokohama, 1991, pp. 478-480.

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