Semiconductor integrated circuit device having...

Details Semiconductor integrated circuit device having... Semiconductor integrated circuit device having...

2006-07-04

2006-07-04

Coleman, W. David (Department: 2823)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S263000

Reexamination Certificate

active

07071050

ABSTRACT:
A semiconductor memory device having nonvolatile memory cells each formed of a MISFET having both a floating gate and a control gate and first and second semiconductor regions serving as the source and drain regions, respectively. In accordance with the method of manufacture thereof, an impurity, for example, arsenic, is introduced to form both the first and second semiconductor regions but with the second semiconductor region having a lower dose thereof so that the first semiconductor region formed attains a junction depth greater than that of the second semiconductor region, and both the first and second semiconductor regions have portions thereof extending under the floating gate electrode. The device and method therefor further feature the formation of MISFETs of peripheral circuits.

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