Stabilization of dopant concentration in semiconductor...

Details Stabilization of dopant concentration in semiconductor... Stabilization of dopant concentration in semiconductor...

2006-05-02

2006-05-02

Sarkar, Asok Kumar (Department: 2891)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C257S330000

Reexamination Certificate

active

07037789

ABSTRACT:
A method for manufacturing a semiconductor device includes: forming a trench in a predetermined layer of a semiconductor substrate; heating the substrate having the trench in a non-oxidizing and non-nitridizing atmosphere containing a dopant or a compound that includes the dopant in order to smooth the surfaces defining the trench and to maintain the dopant concentration in the predetermined layer to be a predetermined concentration before the heating is treated; and forming an epitaxially grown film to fill the trench. The conductivity type of the dopant contained in the non-oxidizing and non-nitridizing atmosphere is the same as that of the dopant initially contained in the predetermined layer.

REFERENCES:
patent: 4466173 (1984-08-01), Baliga
patent: 4528745 (1985-07-01), Muraoka et al.
patent: 5114749 (1992-05-01), Nishio et al.
patent: 6303446 (2001-10-01), Weiner et al.
patent: 6406982 (2002-06-01), Urakami et al.
patent: 6552414 (2003-04-01), Horzel et al.
patent: 6666915 (2003-12-01), Yang et al.
patent: 6828690 (2004-12-01), Falster
patent: 2001/0049182 (2001-12-01), Urakami et al.
patent: 2002/0100410 (2002-08-01), Kim et al.
patent: 2002/0127766 (2002-09-01), Ries et al.
patent: 2002/0132412 (2002-09-01), Mathew et al.
patent: 1 111 685 (2001-06-01), None
patent: 2002-124474 (2002-04-01), None
Office Action issued from Japanese Patent Office on Jul. 26, 2005 for the corresponding Japanese patent application No. 2002-161594 (a copy and English translation thereof).

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