Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2006-05-02
2006-05-02
Luu, Chuong Anh (Department: 2818)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S149000, C438S151000, C438S486000
Reexamination Certificate
active
07037779
ABSTRACT:
In a thin film transistor, a metallic element promoting crystallization of an amorphous silicon film is effectively removed and the productivity is improved. By using a silicon film containing an element belonging to the group15such as phosphorus through contact holes reaching a source region and a drain region, a metallic element promoting crystallization of an amorphous silicon film can be effectively removed or decreased and the productivity can be improved.
REFERENCES:
patent: 4410375 (1983-10-01), Sawada et al.
patent: 5272099 (1993-12-01), Chou et al.
patent: 5643826 (1997-07-01), Ohtani et al.
patent: 5700333 (1997-12-01), Yamazaki et al.
patent: 5843225 (1998-12-01), Takayama et al.
patent: 5915174 (1999-06-01), Yamazaki et al.
patent: 5923962 (1999-07-01), Ohtani et al.
patent: 5953597 (1999-09-01), Kusumoto et al.
patent: 5961743 (1999-10-01), Yamazaki et al.
patent: 5977559 (1999-11-01), Zhang et al.
patent: 6031249 (2000-02-01), Yamazaki et al.
patent: 6066518 (2000-05-01), Yamazaki
patent: 6072193 (2000-06-01), Ohnuma et al.
patent: 6133075 (2000-10-01), Yamazaki et al.
patent: 6133119 (2000-10-01), Yamazaki
patent: 6156590 (2000-12-01), Yamazaki et al.
patent: 6156628 (2000-12-01), Ohnuma et al.
patent: 6194255 (2001-02-01), Hiroki et al.
patent: 6251712 (2001-06-01), Tanaka et al.
patent: 6303415 (2001-10-01), Yamazaki
patent: 6310363 (2001-10-01), Ohnuma et al.
patent: 6316789 (2001-11-01), Yamazaki et al.
patent: 6433363 (2002-08-01), Yamazaki et al.
patent: 6518102 (2003-02-01), Tanaka et al.
patent: 6541793 (2003-04-01), Ohnuma et al.
patent: 6576924 (2003-06-01), Yamazaki et al.
patent: 6639244 (2003-10-01), Yamazaki et al.
patent: 6727124 (2004-04-01), Nakajima et al.
patent: 6743667 (2004-06-01), Hiroki et al.
patent: 07-130652 (1995-05-01), None
patent: 11-354448 (1999-12-01), None
Luu Chuong Anh
Semiconductor Energy Laboratory Co,. Ltd.
LandOfFree
Semiconductor device and manufacturing method thereof does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Semiconductor device and manufacturing method thereof, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device and manufacturing method thereof will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3594849