Semiconductor device and manufacturing method thereof

Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate

Reexamination Certificate

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C438S149000, C438S151000, C438S486000

Reexamination Certificate

active

07037779

ABSTRACT:
In a thin film transistor, a metallic element promoting crystallization of an amorphous silicon film is effectively removed and the productivity is improved. By using a silicon film containing an element belonging to the group15such as phosphorus through contact holes reaching a source region and a drain region, a metallic element promoting crystallization of an amorphous silicon film can be effectively removed or decreased and the productivity can be improved.

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