Borderless contact structures

Details Borderless contact structures Borderless contact structures

2006-07-11

2006-07-11

Chaudhari, Chandra (Department: 2891)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S596000, C438S655000

Reexamination Certificate

active

07074666

ABSTRACT:
A borderless contact structure and method of fabricating the structure, the method including: (a) providing a substrate; (b) forming a polysilicon line on the substrate, the polysilicon line having sidewalls; (c) forming an insulating sidewall layer on the sidewalls of the polysilicon line; (d) removing a portion of the polysilicon line and a corresponding portion of the insulating sidewall layer in a contact region of the polysilicon line; and (e) forming a silicide layer on the sidewall of the polysilicon line in the contact region. Also an SRAM cell using the borderless contact structure and a method of fabricating the SRAM cell.

REFERENCES:
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patent: 6153510 (2000-11-01), Ishibashi
patent: 6207514 (2001-03-01), Furukawa et al.
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patent: 2002/0111025 (2002-08-01), Weybright et al.
patent: 2003/0228752 (2003-12-01), Strane et al.
IBM Confidential, Self-Aligned Borderless Contacts, Strange et al., 4 pages. (2002).

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