Methods for fabricating fin field effect transistors using a...

Details Methods for fabricating fin field effect transistors using a... Methods for fabricating fin field effect transistors using a...

2006-07-11

2006-07-11

Fourson, George (Department: 2823)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S157000, C438S176000, C438S197000, C438S283000, C438S294000, C438S296000, C438S300000, C438S303000, C257SE21442

Reexamination Certificate

active

07074662

ABSTRACT:
A method of forming a fin field effect transistor on a semiconductor substrate includes forming a vertical fin protruding from the substrate. A buffer oxide liner is formed on a top surface and on sidewalls of the fin. A trench is then formed on the substrate, where at least a portion of the fin protrudes from a bottom surface of the trench. The trench may be formed by forming a dummy gate on at least a portion of the fin, forming an insulation layer on the fin surrounding the dummy gate, and then removing the dummy gate to expose the at least a portion of the fin, such that the trench is surrounded by the insulation layer. The buffer oxide liner is then removed from the protruding portion of the fin, and a gate is formed in the trench on the protruding portion of the fin.

REFERENCES:
patent: 5844278 (1998-12-01), Mizuno et al.
patent: 6413802 (2002-07-01), Hu et al.
patent: 6548866 (2003-04-01), Noguchi
patent: 6764884 (2004-07-01), Yu et al.
patent: 2002/0011612 (2002-01-01), Hieda
patent: 2005/0118824 (2005-06-01), Achuthan et al.

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