Semiconductor device and method of fabricating the same

Details Semiconductor device and method of fabricating the same Semiconductor device and method of fabricating the same

2006-09-12

2006-09-12

Tran, Mai-Huong (Department: 2818)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S003000, C438S240000, C438S653000

Reexamination Certificate

active

07105397

ABSTRACT:
According to the present invention, there is a provided a semiconductor device fabrication method having, forming a mask material in a surface portion of a semiconductor substrate, and forming a step having a projection by using the mask material; forming a dielectric film on the semiconductor substrate so as to fill the step and planarize an entire surface; annealing the dielectric film; etching back the dielectric film such that a surface of the dielectric film is positioned between upper and lower surfaces of the mask material; and removing the mask material to expose a surface of the projection of the semiconductor substrate.

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Sato et al., “Advanced Spin Coating Film Transfer and Hot-Pressing Process for Global Planarization with Dielectric-Material-Viscosity Control,” Jpn. J. Appl. Phys. (Apr. 2002), 41:2367-73.
Jin-Hwa Heo et al., “Void Free and Low Stree Shallow Trench Isolation Technology using P-SOG for sub 0.1 μm Device”. Symposium On VLSI Technology Digest of Technical Papers. pp. 132-133 (2002).
Yukio Nishiyama et al., “Method for Manufacturing Semiconductor Device”, U.S. Appl. No. 10/193,143, filed Jul. 12, 2002.

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