Method to design for or modulate the CMOS transistor...

Details Method to design for or modulate the CMOS transistor... Method to design for or modulate the CMOS transistor...

2006-05-16

2006-05-16

Fourson, George (Department: 2823)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S221000, C438S223000, C257SE27064, C257SE21633, C257SE21642

Reexamination Certificate

active

07045410

ABSTRACT:
A method (200) of forming an isolation structure is disclosed, and includes forming a patterned isolation hard mask layer (206, 212) having an isolation opening associated therewith over a semiconductor body. An implant into the isolation opening is then performed (214), followed by forming an isolation trench (216) in the semiconductor body associated with the isolation opening. The isolation trench is then filled with a dielectric material (218).

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