Semiconductor device manufacturing: process – Chemical etching – Combined with the removal of material by nonchemical means
Reexamination Certificate
2006-07-04
2006-07-04
Norton, Nadine G. (Department: 1765)
Semiconductor device manufacturing: process
Chemical etching
Combined with the removal of material by nonchemical means
C438S693000, C438S696000, C438S700000
Reexamination Certificate
active
07071108
ABSTRACT:
There is provided a method of manufacturing a semiconductor device, including irradiating a chemical mechanical polishing slurry with light on applying a chemical mechanical polishing treatment using the slurry to a polishing section of a target substrate to be polished, the slurry containing a dispersion medium and abrasive particles dispersed in the dispersion medium and exhibiting a photocatalytic function upon irradiation with light.
REFERENCES:
patent: 5997620 (1999-12-01), Kodama et al.
patent: 6177026 (2001-01-01), Wang et al.
patent: 6183351 (2001-02-01), Aoki
patent: 6328644 (2001-12-01), Kuramochi et al.
patent: 6362103 (2002-03-01), Watts
patent: 6364744 (2002-04-01), Merchant et al.
patent: 6435947 (2002-08-01), Mueller et al.
patent: 6638143 (2003-10-01), Wang et al.
patent: 6672945 (2004-01-01), Matsuo et al.
patent: 2001009723 (2001-01-01), None
patent: WO 99/61540 (1999-12-01), None
Product Information, TRITON® D-16 Surfactant.
SURFYNOL®, http://www.chunghan.chem.co.kr/eng—surfynol.htm.
Hiroyuki Yano, et al., “Aqueous Dispersion, Aqueous Dispersion for Chemical Mechanical Polishing Used for Manufacture of Semiconductor Devices, Method for Manufacture of Semiconductor Devices, and Method for Formation of Embedded Wiring”, U.S. Appl. No. 09/531,163, filed Mar. 17, 2000.
Notification of Reasons for Rejection issued by the Japanese Patent Office, mailed Oct. 18, 2005, for Japanese Patent Application No. 2002-089951, and English-language translation thereof.
Matsui Yukiteru
Minamihaba Gaku
Yano Hiroyuki
Finnegan Henderson Farabow Garrett & Dunner L.L.P.
Kabushiki Kaisha Toshiba
Norton Nadine G.
Tran Binh X.
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