Radiant energy – Inspection of solids or liquids by charged particles – Electron microscope type
Reexamination Certificate
2006-04-04
2006-04-04
Lee, John R. (Department: 2881)
Radiant energy
Inspection of solids or liquids by charged particles
Electron microscope type
C250S310000
Reexamination Certificate
active
07022988
ABSTRACT:
A method and apparatus for measuring the physical properties of a micro region measures the two-dimensional distribution of stress/strain in real time at high resolution and sensitivity and with a high level of measuring position matching. A sample is scanned and irradiated with a finely focused electron beam (23, 26), and the displacement of position of a diffraction spot (32, 33) is measured by a two-dimensional position-sensitive electron detector (13). The displacement amount is outputted as a voltage value that is then converted into the magnitude of the stress/strain according to the principle of a nano diffraction method, and the magnitude is displayed in synchronism with a sample position signal.
REFERENCES:
patent: 5004918 (1991-04-01), Tsuno et al.
patent: 5414261 (1995-05-01), Ellisman et al.
patent: 5502306 (1996-03-01), Meisburger et al.
patent: 5552602 (1996-09-01), Kakibayashi et al.
patent: 5578821 (1996-11-01), Meisberger et al.
patent: 5866905 (1999-02-01), Kakibayashi et al.
patent: 6051834 (2000-04-01), Kakibayashi et al.
patent: 6548811 (2003-04-01), Nakamura et al.
patent: 6570156 (2003-05-01), Tsuneta et al.
patent: 6750451 (2004-06-01), Koguchi et al.
patent: 6852974 (2005-02-01), Kochi et al.
patent: 4-206941 (1992-07-01), None
patent: 6-36729 (1994-02-01), None
patent: 7-282769 (1995-10-01), None
patent: 10-162768 (1998-06-01), None
patent: 2000-46762 (2000-02-01), None
patent: 2000-65762 (2000-03-01), None
Kimoto, et al; “ Measurement of Strain in Locally Oxidized Silicon Using Convergent-Beam Electron Diffraction.” Jpn. J. Appl. Phys. vol. 32, Part 2, No. 2A, L211-213, Feb. 1, 1993.
Ichihashi Mikio
Kouguchi Masanari
Taniguchi Yoshifumi
Dickstein , Shapiro, Morin & Oshinsky, LLP
Hitachi , Ltd.
Lee John R.
Vanore David A.
LandOfFree
Method and apparatus for measuring physical properties of... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method and apparatus for measuring physical properties of..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method and apparatus for measuring physical properties of... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3588261