Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor
Reissue Patent
2006-01-24
2006-01-24
Lund, Jeffrie R. (Department: 1763)
Single-crystal, oriented-crystal, and epitaxy growth processes;
Forming from vapor or gaseous state
With decomposition of a precursor
C117S002000, C117S084000, C117S088000, C117S093000, C117S200000, C428S208000, C118S725000, C118S728000, C118S500000
Reissue Patent
active
RE038937
ABSTRACT:
It was an objective of the present invention to provide a susceptor which can prevent a increasing phenomenon of the dopant concentration of the epitaxial layer at the peripheral portion of the wafer. By providing a through-hole7passing through to a rear side at the outer peripheral side of the wafer inside the wafer pocket6, a down flow of a reacting source gas from the upper surface of the susceptor5is formed, so that the unwanted flow of the dopant species being exhausted at the rear surface onto the wafer surface can be avoided. As a result, a raise in the dopant concentration at the outer peripheral portion of the epitaxial layer9can be controlled.
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Breiner & Breiner L.L.C.
Lund Jeffrie R.
Sumitomo Mitsubishi Silicon Corporation
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