Semiconductor device manufacturing: process – Coating of substrate containing semiconductor region or of... – Insulative material deposited upon semiconductive substrate
Reexamination Certificate
2006-01-10
2006-01-10
Thomas, Tom (Department: 2815)
Semiconductor device manufacturing: process
Coating of substrate containing semiconductor region or of...
Insulative material deposited upon semiconductive substrate
C438S318000, C438S770000, C438S981000, C257S526000, C257S552000, C257S585000, C257S593000
Reexamination Certificate
active
06984593
ABSTRACT:
A method of forming semiconductor device treating a surface of a substrate to produce a discontinuous growth of a material on the surface through rapid thermal oxidation of the substrate surface at a temperature of less than about 700° C.
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Ballantine Arne W.
Coolbaugh Douglas D.
Williams Steve S.
Connolly Bove & Lodge & Hutz LLP
Sabo William
Thomas Tom
Warren Matthew E.
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