Method of fabricating a flash memory cell

Details Method of fabricating a flash memory cell Method of fabricating a flash memory cell

2006-04-18

2006-04-18

Vu, David (Department: 2818)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C257S315000

Reexamination Certificate

active

07029973

ABSTRACT:
A method of forming a flash memory cell. A tunnel oxide layer, a floating gate layer, and a dielectric layer are formed on a substrate. A control gate layer is formed on the dielectric layer and then etched to form two control gates. The control gates are oxidized to form a plurality of second oxide layers on surfaces of the control gates and aside the control gates. The dielectric layer and the floating gate layer are etched by utilizing the second oxide layers as a mask to form a floating gate underneath each of the control gates. A source is formed between the floating gates. The floating gates and the substrate are oxidized to form a plurality of first oxide layers aside the floating gates and form a third oxide layer on a surface of the source.

REFERENCES:
patent: 5838039 (1998-11-01), Sato et al.

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