Method for manufacturing semiconductor device including an...

Semiconductor device manufacturing: process – Coating of substrate containing semiconductor region or of... – Multiple layers

Reexamination Certificate

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Reexamination Certificate

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07037858

ABSTRACT:
A method for manufacturing a semiconductor device includes forming a barrier layer on an individual device formed on a semiconductor substrate and including a MOS transistor. An ozone process is performed on the barrier layer. A pre-metal dielectric (I′MD) layer is then formed on the barrier layer.

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patent: 2001-0094843 (2001-11-01), None
B. Mayer, “Small Signal Analysis of Source Vapor Control Requirements for APCVD”, Aug. 1996, vol. 9, Issue 3, pp. 344-365.
K. Fujino et al., “Reaction Mechanism of TEOS and 03 Atmospheric Pressure CVD”, Jun. 1991, Eighth International IEEE VLSI Multilevel Interconnection Conference, pp. 445-447.
P. Lee et al., Sub-Atmospheric Chemical Vapor Deposition (SACVD) of TEOS-Ozone USG and BPSG, Jun. 1990, Seventh International IEEE VLSI Multilevel Interconnection Conference, pp. 396-398.
Y. Nishimoto et al., “Dielectric Film Deposition by Atmospheric Pressure and Low Temperature CVD using TEOS, Ozone and New Organometallic Doping Sources”, Jun. 1989, VMIC Conference, pp. 382-389.

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