Static information storage and retrieval – Read/write circuit – Having particular data buffer or latch
Reexamination Certificate
2006-01-10
2006-01-10
Tran, Michael Tranh (Department: 2827)
Static information storage and retrieval
Read/write circuit
Having particular data buffer or latch
C365S233100
Reexamination Certificate
active
06985388
ABSTRACT:
Selecting circuits for columns of an array of memory cells are used to hold read data or write data of the memory cells. The memory cells may be multistate memory cells. There is a shift register chain, having a stage for columns of the array. A strobe pulse is shifted through this shift register. The strobe points, with each clock, at and enables a different selecting circuit in sequence. That particular selecting circuit that has been enabled by the strobe will then perform a certain function. In a read mode, the selected selecting circuit will send the stored information through to the output buffer for output from the integrated circuit. And while in a programming mode, the selected selecting circuit will receive data from an input buffer. This data will be written into a memory cell.
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Parsons Hsue & de Runtz LLP
SanDisk Corporation
Tran Michael Tranh
LandOfFree
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