Method of manufacturing semiconductor device having oxide...

Details Method of manufacturing semiconductor device having oxide... Method of manufacturing semiconductor device having oxide...

2006-07-18

2006-07-18

Fourson, George (Department: 2823)

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

By reaction with substrate

C438S763000, C438S773000, C438S775000, C438S778000, C438S787000, C438S791000, C257S632000, C257S760000, C257SE33060, C257SE31119

Reexamination Certificate

active

07078354

ABSTRACT:
After a first gate oxide film (302) is formed on a substrate (301), a nitride layer (303) is formed by a first oxynitriding process. The first gate oxide film is selectively removed from a thinner film part area of the substrate. A second gate oxide film forming process forms a second gate oxide film (305A) in the thinner film part area and a third gate oxide film (305B) in a thicker film part area. By executing second oxynitriding process, nitride layers (306A and306B) are formed at the thinner and the thicker part areas.

REFERENCES:
patent: 6746965 (2004-06-01), Uehara et al.
patent: 6756635 (2004-06-01), Yasuda et al.
patent: 6759302 (2004-07-01), Chen et al.
patent: 2004/0092133 (2004-05-01), Hyun et al.
patent: 2000-216257 (2000-08-01), None
patent: 2001-53242 (2001-02-01), None
Taiwanese Office Action dated Aug. 16, 2005 (with partial English translation).

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