Method of fabricating flash memory device

Details Method of fabricating flash memory device Method of fabricating flash memory device

2006-04-11

2006-04-11

Estrada, Michelle (Department: 2823)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S786000

Reexamination Certificate

active

07026213

ABSTRACT:
The present invention relates to a method of fabricating a flash memory device. According to the present invention, an oxide film is deposited and etched to form trenches, the trenches are filled with a metal film, and the metal film undergoes CMP to form bit lines. In this case, an etch stop layer of the trench etch process, a CMP stop layer of a CMP process and a wet barrier on the sides of the trenches are formed using a thermally treated SiON film having an etch rate lower than that of a wet chemical. As such, since a thickness and width of bit lines can be made uniform, bit line resistance and capacitance can be maintained constantly.

REFERENCES:
patent: 6924196 (2005-08-01), Sharma et al.
patent: 2003/0139027 (2003-07-01), Ikeda et al.
patent: 2005/0202686 (2005-09-01), Saki et al.

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