Method for planning layout for LSI pattern, method for...

Computer-aided design and analysis of circuits and semiconductor – Nanotechnology related integrated circuit design

Reexamination Certificate

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C716S030000, C716S030000, C430S005000, C430S030000

Reexamination Certificate

active

07103870

ABSTRACT:
First, multiple circuit patterns, which will eventually make an LSI, are designed on a cell-by-cell basis, and an initial placement is made for the circuit patterns designed. Next, optical proximity corrections are performed on at least two of the circuit patterns that have been initially placed to be adjacent to or cross each other, thereby forming optical proximity corrected patterns out of the adjacent or crossing circuit patterns. Then, it is determined whether or not optical proximity corrections can be performed effectively using the corrected patterns. If the effectiveness of the corrections is negated, a design rule defining the circuit patterns is changed to make the corrections effective. Thereafter, the initially placed circuit patterns are placed again in accordance with the design rule changed.

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