Method of fabricating a lateral double-diffused MOSFET...

Details Method of fabricating a lateral double-diffused MOSFET... Method of fabricating a lateral double-diffused MOSFET...

2006-07-11

2006-07-11

Nguyen, Tuan H. (Department: 2813)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S301000, C438S306000

Reexamination Certificate

active

07074659

ABSTRACT:
A method of monolithically fabricating a lateral double-diffused MOSFET (LDMOS) transistor having a source, drain, and a gate on a substrate, with a process flow that is compatible with a CMOS process flow.

REFERENCES:
patent: 2002/0009790 (2002-01-01), Christensen et al.
patent: 2002/0030238 (2002-03-01), Nakamura et al.
patent: 2003/0141559 (2003-07-01), Moscatelli et al.
patent: 2004/0046226 (2004-03-01), Himi et al.

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