Thin channel MOSFET with source/drain stressors

Details Thin channel MOSFET with source/drain stressors Thin channel MOSFET with source/drain stressors

2006-09-26

2006-09-26

Baumeister, B. William (Department: 2891)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257SE27112

Reexamination Certificate

active

07112848

ABSTRACT:
Methods of manufacturing microelectronic device including, in one embodiment, forming a gate electrode over a substrate having an insulating layer interposing a bulk semiconductor portion and a thin semiconductor layer, and removing at least a portion of the thin semiconductor and insulating layers, thereby defining a pedestal comprising a portion of the thin semiconductor and insulating layers. Source/drain stressors are then formed contacting the source/drain extensions on opposing sides of the pedestal and substantially spanning a height no less than the pedestal.

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