Method of removing oxide film on a substrate with hydrogen...

Details Method of removing oxide film on a substrate with hydrogen... Method of removing oxide film on a substrate with hydrogen...

2006-09-12

2006-09-12

Chen, Bret (Department: 1762)

Etching a substrate: processes

Gas phase etching of substrate

Application of energy to the gaseous etchant or to the...

C438S710000, C438S720000, C438S722000

Reexamination Certificate

active

07105101

ABSTRACT:
A dry cleaning process for removing native oxide at improved efficiency is disclosed. The dry cleaning process minimizes the amount of fluorine atoms absorbed on the surface of a processed substrate. Fluorine radicals are provided to the substrate together with hydrogen radicals. The substrate is processed by the reaction of the fluorine radicals and the hydrogen radicals.

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