Semiconductor device for integrated injection logic cell and...

Details Semiconductor device for integrated injection logic cell and... Semiconductor device for integrated injection logic cell and...

2006-09-05

2006-09-05

Nelms, David (Department: 2818)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S323000, C438S508000

Reexamination Certificate

active

07101750

ABSTRACT:
A semiconductor device for an integrated injection logic cell having a pnp bipolar transistor structure formed on a semiconductor substrate, wherein at least one layer of insulating films formed on a base region of the pnp bipolar transistor structure is comprised of a silicon nitride film. The semiconductor device of the present invention is advantageous in that the silicon nitride film constituting at least one layer of the insulating films formed on the base region of the pnp bipolar transistor prevents an occurrence of contamination on the surface of the base region, so that both the properties of the pnp bipolar transistor and the operation of the IIL cell can be stabilized. Further, by the process of the present invention, the above-mentioned excellent semiconductor device can be produced.

REFERENCES:
patent: 4199378 (1980-04-01), van Gils
patent: 6008524 (1999-12-01), Gomi
patent: 6919615 (2005-07-01), Ejiri

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