Semiconductor device manufacturing: process – Coating of substrate containing semiconductor region or of... – By reaction with substrate
Reexamination Certificate
2006-07-04
2006-07-04
Cao, Phat X. (Department: 2814)
Semiconductor device manufacturing: process
Coating of substrate containing semiconductor region or of...
By reaction with substrate
C438S770000
Reexamination Certificate
active
07071120
ABSTRACT:
Disclosed is a process of treating semiconductor substrates, including the production of pure water, a method of producing the pure water for semiconductor fabrication, and a water-producing apparatus. Ammonia is catalytically oxidized in a catalytic conversion reactor to form pure water. The water is then supplied to a semiconductor fabrication process. The water-producing apparatus comprises a housing surrounding a catalytic material for adsorbing ammonia, an ammonia and oxidant source, each in communication with the housing, and an outlet for reaction products. The outlet is connected to a semiconductor processing apparatus. According to preferred embodiments of the invention, the apparatus can be a catalytic tube reactor, a fixed bed reactor or a fluidized bed reactor. This process and apparatus allows the quantity of unreacted excess oxidant to be limited, preventing undesired oxidation of low oxidation resistant metal gate electrodes during semiconductor fabrication processes, such as during wet oxidation processes like source/drain reoxidation. At the same time, the use of ammonia reactants lessens the risk of dangerous explosions and excessive boron diffusion while fabricating surface p-channel semiconductor devices.
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Cao Phat X.
Doan Theresa T.
Knobbe Martens Olson & Bear LLP
Micro)n Technology, Inc.
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