Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – On insulating substrate or layer
Reexamination Certificate
2006-05-09
2006-05-09
Gurley, Lynne A. (Department: 2812)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
On insulating substrate or layer
C438S153000, C438S199000
Reexamination Certificate
active
07041538
ABSTRACT:
A high-performance recessed channel CMOS device including an SOI layer having a recessed channel region and adjoining extension implant regions and optional halo implant regions; and at least one gate region present atop the SOI layer and a method for fabricating the same are provided. The adjoining extension and optional halo implant regions have an abrupt lateral profile and are located beneath said gate region.
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Dokumaci Omer H.
Ieong Meikei
Kanarsky Thomas S.
Ku Victor
Abate Joseph P.
Gurley Lynne A.
Isaac Stanetta
Scully , Scott, Murphy & Presser, P.C.
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