Method of making semiconductor device including a first set...

Details Method of making semiconductor device including a first set... Method of making semiconductor device including a first set...

2006-07-11

2006-07-11

Brewster, William M. (Department: 2823)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S218000, C438S224000, C438S231000

Reexamination Certificate

active

07074663

ABSTRACT:
A method of creating two or more semiconductor elements of different characteristics in one and the same semiconductor substrate. Two antimony-diffused regions are formed in a p-type semiconductor region (of a semiconductor substrate for providing embedded layers for two field-effect transistors of unlike characteristics. Then the substrate is overlaid with a mask bearing two different patterns of windows. Then phosphor is introduced into the substrate through the mask windows to create phosphor-diffused regions in overlying relationship to the antimony-diffused regions. The two window patterns of the mask are such that the two phosphor-diffused regions differ in mean phosphor concentration. The embedded layers for the two FETs are obtained as an n-type epitaxial layer is subsequently formed on the p-type semiconductor region in which have been created the antimony-diffused regions and phosphor-diffused regions.

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