Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2006-09-26
2006-09-26
Pizarro, Marcos D. (Department: 2814)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S592000, C257SE21422
Reexamination Certificate
active
07112491
ABSTRACT:
The invention includes methods of forming field effect transistors. In one implementation, a method of forming a field effect transistor having a gate comprising a conductive metal or metal compound received over conductively doped semiconductive material includes forming transistor gate semiconductive material into a gate line over a semiconductive material channel region. The gate line includes semiconductive material sidewalls. The semiconductive material sidewalls of the gate line are oxidized. After the oxidizing, at least one of a conductive metal or metal compound is formed in electrical connection with the transistor gate semiconductive material to comprise a substantially coextensive elongated portion of a final construction of the gate line of the field effect transistor being formed.
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Microchip Fabrication: A Practical Guide to Semiconductor Processing: Van Zant, Peter; 4thed., 2000, pp. 303-305 and 401-402.
Bicksler Andrew R.
Sandhu Sukesh
Micro)n Technology, Inc.
Pizarro Marcos D.
Wells St. John P.S.
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