Method for producing a low defect homogeneous oxynitride

Details Method for producing a low defect homogeneous oxynitride Method for producing a low defect homogeneous oxynitride

2006-01-31

2006-01-31

Booth, Richard A. (Department: 2812)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S786000

Reexamination Certificate

active

06991987

ABSTRACT:
A process technology effectuates production of low defect homogeneous oxynitride, which can be applied in tunneling dielectrics with high dielectric constants and low barrier heights for flash memory devices, and as gate oxide for ultra-thin logic devices. The process technology involves varying the oxygen content in a the homogeneous oxynitride film comprising a part of the flash memory device, which effectively increases the dielectric constant of the oxynitride film and lowers its barrier height. In one such process, a controlled co-flow of N2O is introduced into a CVD deposition process. This process effectuates production of a oxynitride film with uniform distributions of nitrogen and oxygen throughout.

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