Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2006-01-31
2006-01-31
Pham, Long (Department: 2814)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S212000, C438S268000
Reexamination Certificate
active
06991977
ABSTRACT:
A semiconductor device is formed as follows. A semiconductor substrate having a first region of a first conductivity type is provided. A region of a second conductivity type is formed in the semiconductor substrate such that the first and second regions form a p-n junction. First and second charge control electrodes are formed adjacent to but insulated from one of the first and second regions, along a dimension parallel to flow of current through the semiconductor device, wherein the first charge control electrode is adapted to be biased differently than the second charge control electrode.
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Fairchild Semiconductor Corporation
Pham Long
Townsend and Townsend / and Crew LLP
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