Method of forming capacitor with ruthenium top and bottom...

Details Method of forming capacitor with ruthenium top and bottom... Method of forming capacitor with ruthenium top and bottom...

2006-07-04

2006-07-04

Kennedy, Jennifer (Department: 2812)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S003000, C438S253000, C438S396000

Reexamination Certificate

active

07071053

ABSTRACT:
A semiconductor device containing a dielectric capacitor having an excellent step coverage for a device structure of high aspect ratio corresponding to high integration degree, as well as a manufacturing method therefor are provided. A dielectric capacitor of high integration degree is manufactured by forming a bottom electrode46and a top-electrode48comprising a homogeneous thin Ru film with 100% step coverage while putting a dielectric47therebetween on substrates44, 45having a three-dimensional structure with an aspect ratio of 3 or more by a MOCVD process using a cyclopentadienyl complex within a temperature range from 180° C. or higher to 250° C. or lower.

REFERENCES:
patent: 3614555 (1971-10-01), Glinski
patent: 5130172 (1992-07-01), Hicks et al.
patent: 5874364 (1999-02-01), Nakabayashi et al.
patent: 5973351 (1999-10-01), Kotecki et al.
patent: 6001660 (1999-12-01), Park et al.
patent: 6162712 (2000-12-01), Baum et al.
patent: 6165864 (2000-12-01), Shen et al.
patent: 6187622 (2001-02-01), Kuroiwa et al.
patent: 6358810 (2002-03-01), Dornfest et al.
patent: 6512297 (2003-01-01), Matsuno et al.
patent: 10163131 (1998-06-01), None
patent: 10195656 (1998-07-01), None

Affiliated with

Also associated with

Rating

Method of forming capacitor with ruthenium top and bottom... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of forming capacitor with ruthenium top and bottom..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of forming capacitor with ruthenium top and bottom... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3556100