Trench device structure with single-side buried strap and...

Details Trench device structure with single-side buried strap and... Trench device structure with single-side buried strap and...

2006-07-25

2006-07-25

Sarkar, Asok Kumar (Department: 2891)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S302000

Reexamination Certificate

active

07081382

ABSTRACT:
A trench device with collar oxide for isolation. A buried trench capacitor is formed in a lower portion of a deep trench in a substrate. A conductive layer, surrounded by a collar insulating layer and lower than the collar insulating layer, is deposited in an upper portion of the trench. The collar insulating layer lining the trench is partially removed to expose a portion of the surface of the substrate such that a portion of the conductive layer contacts the substrate. A buried strap is formed where the substrate contacts the conductive layer, as a single-side buried strap. The other portions of the conductive layer are isolated from the substrate by the collar insulating layer. Thus, conventional shallow trench isolation (STI) structure is omitted.

REFERENCES:
patent: 5936271 (1999-08-01), Alsmeier
patent: 6008104 (1999-12-01), Schrems
patent: 6291286 (2001-09-01), Hsiao
patent: 6440793 (2002-08-01), Divakaruni et al.
patent: 6653678 (2003-11-01), Chidambarrao et al.

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