Method of manufacturing a MOS transistor

Details Method of manufacturing a MOS transistor Method of manufacturing a MOS transistor

2006-07-04

2006-07-04

Dang, Phuc T. (Department: 2818)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S304000, C438S525000

Reexamination Certificate

active

07071046

ABSTRACT:
A method of manufacturing a MOS transistor, comprising the steps of providing a semiconductor substrate, forming a gate structure on the semiconductor substrate, performing an implantation to form two implanted regions in the semiconductor substrate respectively adjacent to the gate structure, performing an etching process to remove each implanted region and form a trench, and performing a selective epitaxial growth to fill epitaxial crystal into the trenches, thereby forming a source/drain of the MOS transistor.

REFERENCES:
patent: 6372583 (2002-04-01), Tyagi
patent: 6657223 (2003-12-01), Wang et al.
patent: 6682980 (2004-01-01), Chidambaram et al.
patent: 2004/0072395 (2004-04-01), Liu
patent: 2005/0032322 (2005-02-01), Kim et al.

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