Superconductor device and method of manufacturing the same

Details Superconductor device and method of manufacturing the same Superconductor device and method of manufacturing the same

2006-04-11

2006-04-11

Le, Thao P. (Department: 2818)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S622000, C438S618000

Reexamination Certificate

active

07026241

ABSTRACT:
A semiconductor device comprising element regions formed in a semiconductor substrate, conductor plugs embedded in an interlayer insulation film, and wiring layers connected to the plugs, wherein the plugs are arranged on a straight line orthogonal to a longitudinal direction of the wiring layer in the same pitch as the wiring layers such that the straight line and upper surfaces of the plugs are superposed each other, and when the plugs are viewed in a cross section parallel to a main surface of the substrate and a distance which is between those two edge points of each of the plugs where a split line which passes through a center of each of the plugs passes is defined as a contact diameter, the contact diameter has three or more maximum values and three or more minimum values while the split line is rotated in the cross section by 360 degrees.

REFERENCES:
patent: 5734607 (1998-03-01), Sung et al.
patent: 6160297 (2000-12-01), Shimizu et al.
patent: 6411548 (2002-06-01), Sakui et al.
patent: 6440843 (2002-08-01), Wada et al.
patent: 6444570 (2002-09-01), Shibata
K. Ueno, et al. “A Quarter-Micron Planarized Interconnection Technology with Self-Aligned Plug,” IEDM Tech. Dig., 1992, pp. 305-308.
K. Ueno, et al. “A Half-Micron Pitch Cu Interconnection Technology,” VLSI Tech., Dig., 1995, pp. 27-28.
R.F. Schnabel, et al. “Slotted Vias for Dual Damascene Interconnects in 1Gb DRAMs,” VLSI Tech. Dig., 1999, pp. 43-44.

Affiliated with

Also associated with

Rating

Superconductor device and method of manufacturing the same does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Superconductor device and method of manufacturing the same, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Superconductor device and method of manufacturing the same will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3551442