Methods of fabricating MIM capacitors in semiconductor devices

Details Methods of fabricating MIM capacitors in semiconductor devices Methods of fabricating MIM capacitors in semiconductor devices

2006-07-04

2006-07-04

Fourson, George (Department: 2823)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S244000, C438S253000, C438S386000, C438S387000, C438S396000, C438S692000, C438S702000, C257SE27092, C257SE29346, C257SE21396, C257SE21651

Reexamination Certificate

active

07071054

ABSTRACT:
Methods of fabricating an MIM capacitor and a dual damascene structure of a semiconductor device are disclosed. According to one example, a method includes depositing a first insulating layer on a semiconductor substrate; forming a lower interconnect through the first insulating layer; sequentially depositing a second insulating layer, a third insulating layer, and a fourth insulating layer; forming a first mask pattern over the fourth insulating layer; forming a first dual damascene pattern by etching the fourth insulating layer; depositing a fifth insulating layer; forming a second mask pattern over the fifth insulating layer; forming dual damascene structure by performing an etching process; sequentially depositing a second conducting layer and a dielectric layer on the dual damascene structure; selectively removing some portion of the dielectric layer; depositing a third conducting layer over the dielectric layer; and planarizaing the top surface of the third conducting layer, the dielectric layer, and the second conducting layer by performing a CMP process.

REFERENCES:
patent: 6271084 (2001-08-01), Tu et al.
patent: 6346454 (2002-02-01), Sung et al.
patent: 6413815 (2002-07-01), Lai et al.
patent: 6593185 (2003-07-01), Tsai et al.
patent: 6717193 (2004-04-01), Olewine et al.
patent: 6794262 (2004-09-01), Ning et al.
patent: 2002/0185671 (2002-12-01), Kim
patent: 2003/0011043 (2003-01-01), Roberts
patent: 2003/0027385 (2003-02-01), Park et al.
patent: 2003/0027386 (2003-02-01), Lee
patent: 2003/0092259 (2003-05-01), Ng et al.

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