Method of forming silicided gate structure

Details Method of forming silicided gate structure Method of forming silicided gate structure

2006-03-21

2006-03-21

Nelms, David (Department: 2818)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

Insulated gate formation

C438S664000, C438S682000

Reexamination Certificate

active

07015126

ABSTRACT:
A method of forming a silicided gate of a field effect transistor on a substrate having active regions is provided. The method includes the following steps: (a) forming a silicide in at least a first portion of a gate; (b) after step (a), depositing a metal over the active regions and said gate; and (c) annealing to cause the metal to react to form silicide in the active regions, wherein the thickness of said gate silicide is greater than the thickness of said silicide in said active regions.

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