Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2006-04-18
2006-04-18
Abraham, Fetsum (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S322000
Reexamination Certificate
active
07030436
ABSTRACT:
A high density horizontal merged MOS-bipolar gain memory cell is realized for DRAM operation. The gain cell includes a horizontal MOS transistor having a source region, a drain region, and a floating body region therebetween. The gain cell includes a horizontal bi-polar transistor having an emitter region, a base region and a collector region. The collector region for the horizontal bi-polar transistor serves as the floating body region for the horizontal MOS transistor. A gate opposes the floating body region and is separated therefrom by a gate oxide. The emitter region for the horizontal bi-polar transistor is coupled to a write data line.
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Shuk
Abraham Fetsum
Micro)n Technology, Inc.
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