Method for fabricating hydrogenated silicon oxycarbide thin...

Details Method for fabricating hydrogenated silicon oxycarbide thin... Method for fabricating hydrogenated silicon oxycarbide thin...

2006-07-11

2006-07-11

Chen, Bret (Department: 1762)

Coating processes

Direct application of electrical, magnetic, wave, or...

Plasma

C427S578000

Reexamination Certificate

active

07074461

ABSTRACT:
A hydrogenated SiOC thin film fabrication method includes supplying bis-trimethylsilylmethane and oxygen retaining gas to a wafer installed inside a reaction channel through one supply pipe, simultaneously or sequentially supplying hydrogen to the wafer through another supply pipe, applying RF power in the range of 100 W˜2000 W while supplying those gases and generating a plasma of those gases. During a post process such as oxygen ashing, carbon loss of SiOC film is minimized due to the supplied hydrogen.

REFERENCES:
patent: 6410462 (2002-06-01), Yang et al.
patent: 6576980 (2003-06-01), Shao et al.
patent: 6593248 (2003-07-01), Loboda et al.
patent: 6784119 (2004-08-01), Gaillard et al.
patent: 2003-0112227 (2003-02-01), None
Untranslated Korean Office Action dated Jun. 30, 2003 corresponding to Korean application No. 10-2001-0053721, no page numbers.
English translation of Abstract for Korean patent application No. 2003-0112227 dated Feb. 12, 2003, no page numbers.

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